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Ferroelectric oxide-based heterostructures can be utilized to design interfacial phenomena mediated by charge, lattice, and polar symmetry, as well as developing novel energy-efficient electronics and nanophotonics with programmable functionalities. 

We report the modification of a gas phase ultrafast electron diffraction (UED) instrument that enables experiments with both gas and condensed matter targets, where a time-resolved experiment with sub-picosecond resolution is demonstrated with solid state samples. The instrument relies on a hybrid DC-RF acceleration structure to deliver femtosecond electron pulses on the target, which is synchronized with femtosecond laser pulses. The laser pulses and electron pulses are used to excite the sample and to probe the structural dynamics, respectively. The new system is added with capabilities to perform transmission UED on thin solid samples. It allows for cooling samples to cryogenic temperatures and to carry out time-resolved measurements. We tested the cooling capability by recording diffraction patterns of temperature dependent charge density waves in 1T-TaS2. The time-resolved capability is experimentally verified by capturing the dynamics in photoexcited single-crystal gold. 

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23 000 cm2 V−1 s−1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering. 

Abstract Two‐dimentional magnets are of significant interest both as a platform for exploring novel fundamental physics and for their potential in spintronic and optoelectronic devices. Recent bulk magnetometry studies have indicated a weak ferromagnetic response in tungsten disulfide (WS₂), and theoretical predictions suggest edge‐localized magnetization in flakes with partial hydrogenation. Here, room‐temperature wide‐field quantum diamond magnetometry to image pristine and Fe‐implanted WS₂flakes of varying thicknesses (45–160 nm), exfoliated from bulk crystals and transferred to NV‐doped diamond substrates, is used. Direct evidence of edge‐localized stray magnetic fields, which scale linearly with applied external magnetic field (4.4–220 mT), reaching up to ±4.7 µT, is observed. The edge signal shows a limited dependence on the flake thickness, consistent with dipolar field decay and sensing geometry. Magnetic simulations using five alternative models favor the presence of edge magnetization aligned along an axis slightly tilted from the normal to the WS₂flake's plane, consistent with spin canting in antiferromagnetically coupled edge states. Thses findings establish WS₂as a promising platform for edge‐controlled 2D spintronics.